Characterisation of Single-Crystal CVD-Diamond Detectors
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چکیده
Recently, the quality of intrinsic CVD Diamond (CVD-D) has tremendously been improved. The replacement of the previous used silicon substrates for growth by ultra-pure HPHT Single-Crystal (SC) {100}-oriented diamond provides homo-epitaxial grown material almost free of structural defects. Nevertheless, all substrates nominally {100}oriented show a certain amount of off-angle declination from the perfect {100}-axis. If this off angle is > 2 degrees, growth is seriously influenced. We have started to investigate SC-CVDD for Heavy-Ion (HI) spectroscopy and ToF measurements with relativistic ions and protons, where PolyCrystalline CVD-D Detectors (PC-CVD-DD) fails[1].
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تاریخ انتشار 2005